Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 0.7 S |
| Rds On - Drain-Source Resistance | 1.7 Ohms |
| Rise Time | 18 ns |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 100 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | DPAK-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | TK4P60D |
| Packaging | Cut Tape or Reel |
| Brand | Toshiba |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.4 V |
| Qg - Gate Charge | 12 nC |
| Technology | Si |
| Id - Continuous Drain Current | 4 A |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Typical Turn-Off Delay Time | 55 ns |
| Typical Turn-On Delay Time | 40 ns |
| Factory Pack Quantity | 2000 |
| Subcategory | MOSFETs |
| Tradename | MOSVII |
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