Технические характеристики продукта
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 33 S |
| Rds On - Drain-Source Resistance | 17.7 mOhms |
| Rise Time | 6 ns |
| Fall Time | 6 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 104 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | PowerPAK SO-8 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | SIR |
| Packaging | Cut Tape or Reel |
| Brand | Vishay / Siliconix |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 41 nC |
| Technology | Si |
| Id - Continuous Drain Current | 51.6 A |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Typical Turn-Off Delay Time | 18 ns |
| Typical Turn-On Delay Time | 13 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Tradename | ThunderFET, PowerPAK |
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